| Title |
A Monolithically Integrated Single-Input Load-Modulated Balanced Amplifier With Enhanced Efficiency at Power Back-Off |
|
Authors |
|
|
Publication date |
2021/01/14 |
|
Journal |
IEEE Journal of Solid-State Circuits |
| Volume |
56 |
| Issue |
5 |
| Pages |
1553 - 1564 |
| Publisher |
Institute of Electrical and Electronics Engineers (IEEE) |
| Abstract |
In this article, the design of a power amplifier (PA) using a simple but effective architecture, namely, load-modulated balanced amplifier (LMBA), is presented. Using this architecture for PA design, it can achieve not only a relatively high saturated output power but also an excellent efficiency enhancement at the power back-off (PBO) region. To prove that the presented approach is feasible in practice, a PA is designed in a 1- 脦录m gallium arsenide (GaAs) HBT process. Operating under a 5-V power supply, the PA can deliver more than 31-dBm saturated output power with 36% collector efficiency (CE) at 5 GHz. Moreover, it also achieves 1.2 and 1.23 times CE enhancement over an idealistic Class-B PA at 6- and 9-dB PBO levels, respectively. Finally, the designed PA supports 64-quadrature amplitude modulation (QAM) with 80 Msys/s at 22-dBm average output power while still maintaining an error vector magnitude (EVM) and adjacent channel power ratio (ACPR) better than -29.5 dB and -29.4 dBc, respectively. |
| Index terms / Keywords |
Doherty amplifier, gallium arsenide (GaAs) HBT, load-modulated balanced amplifier (LMBA), monolithic microwave integrated circuit (MMIC), power amplifier (PA), power back-off (PBO) capability. |
| DOI |
10.1109/JSSC.2020.3048715 |
| URL |
|
Mindanao State
University - Iligan Institute of Technology